A physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice. Based on the semiconductor physics, the model accurately predicts the nonlinear junction capacitance variations, recombinations, and conductivity modulation of the power device. The procedure to incorporate the model into IG-Spice and various methods to ensure convergence are described. The IG-Spice IGBT model is presented, including all the physical effects which have been shown to be important in describing the device. Effectiveness of the model is shown by comparing the measured data for single device used in inductive load, and by comparing the static and dynamic current sharing of paralleled IGBTs. The simulated results are verified with experimental results. Accuracy is determined by the accuracy of the required parameters extracted.

Master of Science