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Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology

descriptionPublicationkeyboard_double_arrow_right External research report 17 Sep 2008 Singapore
Authors: Tan, Cher Ming.; Tse, Man Siu.;

handle: 10356/2887

Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology

Abstract

With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.

RG 57/98

Country
Singapore
Related Organizations
Keywords

DRNTU::Engineering::Electrical and electronic engineering::Power electronics

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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