
handle: 10356/2868
This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions.
RG 15/99
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors, 621, 510
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors, 621, 510
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