Anderson Localization in Carbon Nanotubes: Defect Density and Temperature Effects

descriptionPublicationkeyboard_double_arrow_right Article , Preprint 19 Dec 2005Embargo end date: 01 Jan 2005 English Publisher:American Physical Society (APS)Journal:Physical Review Letters, volume 95 (issn: 0031-9007, eissn: 1079-7114,

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Authors: Biel, Blanca; García-Vidal, F. J.; Rubio, Angel; Flores, Fernando;

doi: 10.1103/physrevlett.95.266801 , 10.48550/arxiv.cond-mat/0511265

pmid: 16486382

arXiv: cond-mat/0511265

handle: 10261/98008

Anderson Localization in Carbon Nanotubes: Defect Density and Temperature Effects

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Abstract

The role of irradiation induced defects and temperature in the conducting properties of single-walled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that di-vacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of di-vacancies (5-9) brings up strong Anderson localization effects and a seemly universal curve for the resistance as a function of the number of defects. It is also shown that low temperatures, around 15-65 K, are enough to smooth out the fluctuations of the conductance without destroying the exponential dependence of the resistivity as a function of the tube length.

4 pages, 4 figures

Related Organizations

Autonomous University of Madrid
Spain
Donostia International Physics Center
Spain
Freie Universität Berlin
Germany
European Theoretical Spectroscopy Facility
Belgium

Keywords

Condensed Matter - Materials Science, Condensed Matter - Strongly Correlated Electrons, Strongly Correlated Electrons (cond-mat.str-el), Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences

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