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handle: 10261/88520
Laser irradiation of Sb/Ge layered films has induced melting and interfacial mixing. The melting/mixing process nucleates at interfacial preferential sites, and follows a well-defined planar front when Sb is the upper layer. When Ge is uppermost, rippling of the film surface and mixed layers are observed. © 1993.
We acknowledge support from the British Council-Spanish Joint Research Program, CICYT under the Spanish TIC-90 program, and from the Glasstone Benefaction (AKPL).
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