The incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have focused the evaluation of the advantages of this incorporation, additional work in this direction is required. This paper compares RTD-CMOS and pure CMOS realizations of a set of logic gates which can be operated in a gate-level nanopipelined fashion, thus allows estimating logic networks operating frequency. Lower power-delay products are obtained for RTD/CMOS implementations.

This work has been funded by the Spanish Government under project NDR, TEC2007-67245/MIC, and the Junta de Andalucía through the Proyecto de Excelencia TIC-2961.

Trabajo presentado al 13th DSD celebrado en Lille del 1 al 3 de septiembre de 2010.

Peer Reviewed