Metastable phase formation in laser-processed Al-Ge sputtered thin films

descriptionPublicationkeyboard_double_arrow_right Article 01 Jul 1987 English Publisher:Springer Science and Business Media LLCJournal:Journal of Materials Science, volume 22, pages 2,346-2,350 (issn: 0022-2461, eissn: 1573-4803,

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Authors: Catalina, Fernando; Afonso, Carmen N.; Quintana, M. C.; Ortiz, Carmen;

doi: 10.1007/bf01082114

handle: 10261/77255

Metastable phase formation in laser-processed Al-Ge sputtered thin films

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Abstract

The formation of a metastable phase in Al59Ge41 thin films under microsecond laser irradiation is reported. Thin films prepared by co-sputtering are amorphous as-grown. Upon laser processing, amorphous and crystalline phases are detected and analysed using TEM and EDX. A metastable structure formed by laminar-textured aluminium alternating with an hexagonal metastable phase is observed. © 1987 Chapman and Hall Ltd.

The present work was partially supported by CAYCIT (Spain). We would like to thank M. A. Ollacarizqueta (CIB, CSIC, Spain) for assistance with micro-analysis and EDX techniques, Dr J. E. E. Baglin (IBM, York- town Heights, USA) for the RBS analysis and Dr J. L. Sacedon (IFM, CSIC, Spain) for the AES analysis.

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IBM (United States)
United States
French Institute of Health and Medical Research
France

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