Cross-gain modulation in broad-area vertical-cavity semiconductor optical amplifier

descriptionPublicationkeyboard_double_arrow_right Article 08 Apr 2005 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 86 (issn: 0003-6951, eissn: 1077-3118,

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Authors: Marino, Francesco; Furfaro, Luca; Balle, Salvador;

doi: 10.1063/1.1905811

handle: 10261/7449

Cross-gain modulation in broad-area vertical-cavity semiconductor optical amplifier

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Abstract

We demonstrate that broad-area vertical-cavity semiconductor optical amplifiers allow for wavelength conversion at 2.5Gb∕s via cross-gain modulation (XGM). XGM is reached with a saturation beam of only 1.5mW over an optical bandwidth of 0.7nm (215GHz). Depending on the wavelengths of the injected fields, inverted or noninverted output can be obtained.

Related Organizations

Spanish National Research Council
Spain

Keywords

Semiconductor optical amplifiers, Amplification, Optical wavelength conversion, Optical modulation

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