Thin Er, Yb co-doped Y2O3 films were grown by pulsed laser deposition from ceramic target. Subsequent ion implantation with 1.1 MeV Er+ ions to a fluence of 6 × 1014 at/cm2 at room temperature was performed in order to modify the structure of the as-deposited films. The as-deposited films have a polycrystalline column-like structure. Ion implantation induces defects into the as-deposited films. After annealing at 900 °C for 1 h in oxygen atmosphere, the films recrystallize in roundly shaped grain-like structure with grain size of about 100 nm. The Er3+ photoluminescence response was obtained for all the films by excitation through cross-relaxation of Yb3+ ions. The IR emission spectrum, consisting of two narrow peaks at 1415 and 1514 nm, differs from the typical spectra of Er-doped materials. The VIS emission spectrum observed in as-deposited films does not appear after implantation and subsequent 900 °C annealing. © 2007 Elsevier B.V. All rights reserved.

This work was supported in part by EU project NANOPHOS, Contract IST-2001-39112 and by the Bulgarian Ministry of Education and Science under Contract MUF-1511.

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