Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

descriptionPublicationkeyboard_double_arrow_right Article 01 Jun 2011 English Publisher:Elsevier BVJournal:Materials Letters, volume 65, pages 1,608-1,610 (issn: 0167-577X,

Copyright policy )

Authors: Beltrán, A. M.; Ben, Teresa; Sánchez, A. M.; Ripalda, José María; Taboada, Alfonso G.; Molina, Sergio I.;

doi: 10.1016/j.matlet.2011.02.086

handle: 10261/48212

Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

- Summary
- Subjects
- Metrics

Abstract

GaSb incorporation to InAs/GaAsquantumdots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties, the introduction of an intermediateGaAslayer is considered a good approach. In this work, we study the effect of the introduction of aGaAsintermediatelayer between InAsquantumdots and aGaSb capping layer on structural and crystalline quality of these heterostructures. As the thickness of the GaAsintermediatelayer increases, a reduction of defect density has been observed as well as changes of quantumdots sizes. This approach suggests a promising method to improve the incorporation of Sb to InAs heterostructures.

This work was supported by the Spanish MCI (projects TEC2008-06756-C03-02/TEC and CONSOLIDER INGENIO 2010 CSD2009-00013) and the Junta de Andalucía (PAI research group TEP-120; project P08-TEP-03516).

Peer reviewed

Related Organizations

Keywords

Quantumdots, GaAs–GaSb–InAs, Defects, Transmission electron microscopy

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	4
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average