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handle: 10261/45947
The photo-response behaviour of Amorphous Silicon Position Detectors(ASPDs)under prolonged illumination with a 681nm diode–laser and a 633 nm He–Ne laser is presented. Both direct and inverse Staebler–Wronski effects are observed.
3 páginas, 3 figuras.-- Letter to the Editor.-- et al.
Peer reviewed
Direct and inverse Staebler–Wronski effects, Direct and inverseStaebler–Wronski effects, Position sensing detectors, Amorphous silicon, ASPD
Direct and inverse Staebler–Wronski effects, Direct and inverseStaebler–Wronski effects, Position sensing detectors, Amorphous silicon, ASPD
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