Implementation of GaAsGe ternary alloy in a heterojunction solar cell
Implementation of GaAsGe ternary alloy in a heterojunction solar cell
In the present work, we reveal preliminary results of the application of (GaAs)1-x(Ge2)x with 6.4% Ge content as an absorbing layer in a PV device. Both TEM and XRD suggest high structural quality and no extended defects. Intense PL is obtained at room temperature. We grew the device by Molecular Beam Epitaxy. We report a band gap energy of 1.14 eV, corresponding to an intermediate value between the GaAs and Ge band gaps, and a Voc of 0.76 eV. The IQE reaches above 40% at energies below the band gap of the GaAs matrix. These first results highlight the experimental applicability of (GaAs)1-x(Ge2)x in an actual photovoltaic device.
Trabajo presentado en el 35th International Photovoltaic Science and Engineering Conference (PVSEC-35), celebrado en Numazu (Japón), del 10 al 15 de noviembre de 2024
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