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handle: 10261/373931 , 11585/1030080
Three-dimensional (3D) architected electrode materials are expected to exhibit advantageous properties such as enlarged surface area, increased mass transfer, enhanced adsorption and more active sites exposed. In this paper, boron-doped diamond (BDD) electrodes on 3D printed patterned silicon carbide (SiC) scaffolds have been fabricated using chemical vapor deposition (CVD). The stabilization of the plasma sphere by using clamshell type CVD reactor, introducing the outer protecting plate, the optimization of CVD parameters, and the design of 3D-SiC scaffolds improved the sp3/sp2 ratio, uniformity and growth rate of BDD. 3D-BDD electrodes exhibit enough electrical conductivity for electrochemical applications. The preliminary test for electrochemical carbon dioxide reduction (CO2R) has showed the potential advantages of this type of 3D structured BDD electrodes. © 2024 Elsevier B.V.
This work was supported by the Grant PID2021-125427OB-I00 funded by MCIN/AEI/ 10.13039/501100011033 and by “ERDF A way of making Europe”. M. B. acknowledges the financial support from JSPS through FY2020 JSPS Invitational Fellowships for Research in Japan (short-term, Fellowship ID S20030). Furthermore, this work was partly supported by Grant-in-Aid for Scientific Research A 23H00288.
Peer reviewed
Three-dimensional electrodes, Boron-doped diamond; Chemical vapor deposition (CVD); Electrochemistry; Silicon carbide (SiC); Three-dimensional electrodes; CO2 reduction, Electrochemistry, Boron-doped diamond, Chemical vapor deposition (CVD), Silicon carbide (SiC)
Three-dimensional electrodes, Boron-doped diamond; Chemical vapor deposition (CVD); Electrochemistry; Silicon carbide (SiC); Three-dimensional electrodes; CO2 reduction, Electrochemistry, Boron-doped diamond, Chemical vapor deposition (CVD), Silicon carbide (SiC)
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