Growth of epitaxial iron disilicide on Si(100)

descriptionPublicationkeyboard_double_arrow_right Article 01 May 1992 English Publisher:Elsevier BVJournal:Surface Science, volume 269-270, pages 1,016-1,021 (issn: 0039-6028,

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Authors: Gallego, José M.; García Martínez, Jorge Manuel; Ortega, J. E.; Vázquez de Parga, Amadeo L.; de la Figuera, Juan; Ocal, Carmen; Miranda, Rodolfo;

doi: 10.1016/0039-6028(92)91386-p

handle: 10261/32158

Growth of epitaxial iron disilicide on Si(100)

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Abstract

The growth of epitaxial FeSi2 on Si(100) substrates under ultrahigh-vacuum conditions has been achieved using two different methods; molecular beam epitaxy and the “template layer” method. The silicide layers have been characterized by surface sensitive techniques such as Auger electron spectroscopy, electron energy loss spectroscopy, scanning tunneling microscopy and low energy electron diffraction.

Financial support by the ESPRIT BRA 3026 and the CICYT is gratefully acknowledged.

6 páginas, 4 figuras.

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Autonomous University of Madrid
Spain

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