Epitaxial metallic nanostructures on GaAs

descriptionPublicationkeyboard_double_arrow_right Article 01 Jun 2001 Spain English Publisher:Elsevier BVJournal:Surface Science, volume 482-485, pages 910-915 (issn: 0039-6028,

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Authors: Martínez Boubeta, Carlos; Menéndez, José Luis; Costa Krämer, José Luis; García Martínez, Jorge Manuel; Anguita, José Virgilio; Bescós, B.; Cebollada, Alfonso; +4 Authors

doi: 10.1016/s0039-6028(01)00728-2

handle: 10261/32111

Epitaxial metallic nanostructures on GaAs

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Abstract

High quality metal/insulator heterostructures are grown epitaxially on semiconductor GaAs(1 0 0) substrates using appropriate MgO(1 0 0) buffer layers. Two model systems are described: Fe/MgO/Fe trilayers, that are used to fabricate and study epitaxial magnetic tunnel junctions, and W(1 0 0) films, which exhibit ballistic transport properties with high electron mobility. In both cases the quality of the crystalline structure as well as the interfaces at the atomic level are related to the observed magnetic and transport properties.

This work has been performed under financial support of NATO Linkage Grant CRG.LG 974637, Spanish City MAT98-0974-C03-01 and MAT 99-0724-C03-03, and CAM 07N/0056/1999. J.L.M. acknowledges financial support from Comunidad de Madrid, Consejería de Educación y Cultura.

6 páginas, 4 figuras.

Peer reviewed

Country

Spain

Related Organizations

Spanish National Research Council
Spain
Institute of Microelectronics Technology and High Purity Materials
Russian Federation

Keywords

Iron, Electrical transport measurements, Magnetic phenomena, Metal–insulator interfaces, Metal–semiconductor magnetic thin film structures, Magnesium oxides, Tungsten, Epitaxy

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