
handle: 10261/31266
[ES] Se ha caracterizado mediante microscopía de efecto túnel a presión atmosférica la metalización de GaAs con Pt. Los resultados obtenidos no sólo confirman el carácter poroso de la deposición, sino que también permiten distinguir claramente los centros de metal del substrato semiconductor mediante las imágenes espectroscópicas.
[EN] A characterization of the Pt metallization of the GaAs surface has been done with a scanning tunneling microscope in air. The results not only confirm the porous character of the deposition but also clearly differentiate between the metal spots and the semiconductor substrate by means of the spectroscopic images.
Peer reviewed
3 páginas.
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 0 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Average | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Average | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Average |
