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Photonic use of intermediate band materials based on a chalcogenide-type semiconductor

Authors: Conesa Cegarra, José Carlos; Lucena García, Raquel; Wahnón Benarroch, Perla; Palacios Clemente, Pablo; Fernández Sánchez, Julio Juan; Sánchez Noriega, Kefrén; Aguilera Bonet, Irene;

Photonic use of intermediate band materials based on a chalcogenide-type semiconductor

Abstract

[ES] La invención relaciona al uso, en la fabricación de materiales de tipo o de dispositivos para las aplicaciones photonic, de los compuestos del chalcogenide-tipo que tienen un elemento octahedrally coordinado del indio y en donde un elemento de transición se introduce en la posición octaédrica que genera a una banda intermedia parcialmente ocupada a parte de las de la valencia y de la conducción del semiconductor inicial, según cálculos de los mecánicos del quántum. Esto posibilita, por la absorción de dos fotones que tienen energías más bajas que la anchura de banda impedida del semiconductor inicial, un equivalente del resultado a eso conseguida, sin la banda intermedia dicha, por la absorción de un foton de las alto-energías. El uso de tal bote del material de tipo de tal modo mejora el rendimiento y la prestación de los diferentes dispositivos fotovoltaicos, photocatalytic, photoelectrochemical, optoelectrónicos o photonic de la conversión. El sulfuro del indio sustituido en parte con vanadio o titanio es uno de los materiales de tipo específicos que tienen estas propiedades que se sintetiza según la invención.

[EN] The invention relates to the use, in the manufacturing of materials or devices for photonic applications, of chalcogenide-type compounds having an octahedrally coordinated indium element and wherein a transition element is introduced in octahedral position generating a partially occupied intermediate band separate from those of valence and conduction of the initial semiconductor, according to quantum mechanics calculations. This enables, by absorption of two photons having energy lower than the prohibited bandwidth of the initial semiconductor, a result equivalent to that achieved, without said intermediate band, by the absorption of a higher-energy photon. The use of such a material can thereby improve yield and performance of various photovoltaic, photocatalytic, photoelectrochemical, optoelectronic or photonic conversion devices. Indium sulfide substituted in part with vanadium or titanium is one of the specific materials having these properties that is synthesised according to the invention.

A1 Solicitud de patentes con informe sobre el estado de la técnica

Consejo Superior de Investigaciones Científicas (España)

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
Green