Thermoelectric materials are paramount to harvest electrical energy from wasted heat. Crystalline silicon can be used for thermoelectric applications [Dario Narducci, Stefano Frabboni and Xanthippi Zianni, J. Mater. Chem. C (2015) 3, 12176]. However to trigger crystallization high temperature annealing procedures for long time are required, which reduces dopant level. Using Metal-induced crystallization (MIC), we can circumvent this issue by reducing the annealing temperature and time [JA Perez Taborda et al, Nanotechnology 27 (2016) 175401]. In this work, we have grown a series of boron-doped Si/Au bilayers by means of magnetron sputtering at different growth temperatures. The nanometer-thick Au film grown as buffer layer was used in order to crystallize the p-type Si thin film taking advantage of Si-Au euthectic formation. We have characterized the thermoelectrical properties obtaining a promising Power Factor of 470 W/K2m at room temperature. We have also characterized the films by means of High Resolution Scanning Electron Microscopy (SEM), Raman Effect characterization, Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD) to study the crystallinity and morphology of these silicon thin films.

Resumen del trabajo presentado en la Virtual Conference on Thermoelectrics, celebrada virtualmente por zoom del 20 al 22 de julio de 2021

Peer reviewed