Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

descriptionPublicationkeyboard_double_arrow_right Article 15 Aug 2009 Spain English Publisher:AIP PublishingJournal:Journal of Applied Physics, volume 106 (issn: 0021-8979, eissn: 1089-7550,

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Authors: Rodríguez Fernández, J.; Carcelen, V.; Hidalgo Alcalde, Pedro; Vijayan, N.; Piqueras De Noriega, Francisco Javier; Sochinskii, N. V.; Pérez, J. M.; +1 Authors

doi: 10.1063/1.3197031

handle: 20.500.14352/44202 , 10261/23646

Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

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Abstract

Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.

Country

Spain

Related Organizations

Spanish National Research Council
Spain
National Physical Laboratory of India
India
Complutense University of Madrid
Spain
Centro Nacional de Microelectrónica
Spain
American SIDS Institute
United States

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Keywords

Física de materiales, Cadmium compounds, Cathodoluminescence, Electrical resistivity, II-VI semiconductors, Semiconductor growth, Cdte, Growth, Crystal growth from melt, Indium, 538.9, Doping profiles, Semiconductor doping, X-ray chemical analysis, Zinc compounds, Vacancies (crystal)

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