All laser-assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification

descriptionPublicationkeyboard_double_arrow_right Article 25 Mar 1996 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 68, pages 1,781-1,783 (issn: 0003-6951, eissn: 1077-3118,

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Authors: Serna, Rosalía; Blasco, A.; Missana, T.; Solís Céspedes, Javier; Afonso, Carmen N.; Rodríguez, A.; Rodríguez, T.; +1 Authors

doi: 10.1063/1.116665

handle: 10261/21016

All laser-assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification

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Abstract

The growth of heteroepitaxial Si0.8Ge0.2 films on Si(100) by a novel all laser-assisted technique using only ArF excimer laser radiation is demonstrated. Amorphous 30 nm thick films are grown by pulsed laser deposition from alternating pure Si and Ge targets on clean Si substrates. Melting and rapid solidification is then induced by pulsed irradiation (0.54 J/cm2), promoting epitaxial growth.

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Hospital General Universitario de Ciudad Real
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