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Recolector de Ciencia Abierta, RECOLECTA
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Article . 2018
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The thermal boundary resistance at semiconductor interfaces: a critical appraisal of the Onsager vs. Kapitza formalisms

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2018 Italy English Publisher:Royal Society of Chemistry (RSC)Journal:Physical Chemistry Chemical Physics, volume 20, pages 22,623-22,628 (issn: 1463-9076, eissn: 1463-9084, Copyright policy )Funded by:RCN | Porous Media Laboratory, ...
Authors: Riccardo Rurali; Xavier Cartoixà; Dick Bedeaux; Signe Kjelstrup; Luciano Colombo;

doi: 10.1039/c8cp02104j

pmid: 30131997

handle: 10261/178808 , 11250/2988228 , 11584/254235

The thermal boundary resistance at semiconductor interfaces: a critical appraisal of the Onsager vs. Kapitza formalisms

Abstract

We critically readdress the definition of thermal boundary resistance at an interface between two semiconductors.

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Keywords

Non-equilibrium molecular, Lattice thermal boundary resistence; Moelcular dynamics; Semiconductors, Thermal conductivity, Graphene

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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