Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.

This work at Aoyama Gakuin was partly supported by a Grant-in-aid for Scientific Research (Basic Research A: 24241046 and Challenging Exploratory Research: 15K13277) and grant for private University in MEXT and AOARD grant (135049) in U.S. Air Force Office of Scientific Research. The Tokyo University’s work was also supported by the Special Coordination Funds for Promoting Science and Technology. Computational resources at nanohub.org are gratefully acknowledged. S. Roche acknowledges support from the Severo Ochoa Program (MINECO, Grant No. SEV-2013-0295). G.Iannacconne, Gianluca Fiori and Stephan Roche acknowledge the funding from the European Union Seventh Framework Programme under Grant agreement No. 604391 Graphene Flagship.

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