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Electrolyte‐Gated Organic Field‐Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

descriptionPublicationkeyboard_double_arrow_right Article 10 Oct 2016 Spain, Italy English Publisher:WileyJournal:Advanced Materials, volume 28, pages 10,311-10,316 (issn: 0935-9648, eissn: 1521-4095,

Authors: Leonardi F.; Casalini S.; Zhang Q.; Galindo S.; Gutierrez D.; Mas-Torrent M.;

doi: 10.1002/adma.201602479

pmid: 27723255

handle: 10261/143847 , 11577/3324320

Electrolyte‐Gated Organic Field‐Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

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Abstract

This communication presents a novel electrolyte gated field-effect transistor based on a blend of dibenzo-tetrathiafulvalene and polystyrene deposited through bar-assisted meniscus shearing. This technique allows the fabrication of high performing electronic devices suitable for (bio)sensing applications and might capture industrial interest due to its scalability. The reported devices can operate in aqueous solution with comparable complexity to real samples.

Countries

Spain, Italy

Related Organizations

Spanish National Research Council
Spain
Agencia per a la Competitivit de l'Empresa
Spain
University of Padua
Italy
Institute of Cost and Management Accountants of Bangladesh
Bangladesh
Institut de Ciència de Materials de Barcelona
Spain

Keywords

Organic Semiconductor Blend, Electrolyte-Gated Organic Field-Effect Transistors, organic field-effect transistors; organic large-area electronics; organic semiconductors; printable electronics; solution shearing, Organic Large-Area Electronics, Printable Electronics, Solution Shearing

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