Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory
Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory
We characterized normalized noise power density (S I/I BL 2) and bit-line (BL) current fluctuation (ΔI BL) using traps generated applying cycling stress in 26 nm NAND flash memory. The ΔI BL, S I/I BL 2, and capture (τc) and emission times (τe) of random telegraph noise (RTN) were measured before and after cycling stress, respectively. With cycling stress, traps were generated, and S I/I BL 2 and ΔI BL were increased significantly. The τc and τe of RTN after cycling stress are similar with to those before cycling stress. RTN was characterized in terms of the trap position in the three-dimensional space (x T, y T, and z T) of the tunneling oxide and trap energy (E T). three-dimensional technology computer-aided design (TCAD) simulation was used to determine the position of z T through the effect of adjacent BL cells.
- Seoul National University Korea (Republic of)
- SK Group (United States) United States
selected citations These citations are derived from selected sources.This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).2 popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.Average influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).Average impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.Average
Citations provided by BIP!Popularity provided by BIP!