We have experimentally investigated the effects of intense proton beam irradiation (fluence up to 1016 p/cm2 and dose up to 5 Grad) and ion beam irradiation (fluence up to 1.3×1012 ion/cm2 and dose up to 0.92 Grad) at room temperature on Josephson junctions, junction arrays and RSFQ digital devices. The devices we have studied were realized using state of the art full-Nb technology, employing same materials and thicknesses of common Josephson digital circuit designs. Regarding proton irradiation, evidences of induced radiation damage in the electrodes have been found still allowing all circuits work. The appearance of irradiation induced damages presents a low probability and is proportional to the junction area. After ion irradiation, induced radiation damage in the barrier have been observed such that digital circuits are unable to operate.