Calculation of positron lifetime of compound semiconductors

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2010Publisher:Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of SciencesJournal:Acta Physica Sinica, volume 59, page 603 (issn: 1000-3290, eissn: 1000-3290,

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Authors: null Chen Xiang-Lei; null Zhang Jie; null Du Huai-Jiang; null Zhou Xian-Yi; null Ye Bang-Jiao;

doi: 10.7498/aps.59.603

Calculation of positron lifetime of compound semiconductors

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Abstract

On the basis of of local density approximation (LDA) and general gradient approximation (GGA), positron annihilation information has been calculated for five types of compound semiconductors, which are ZnO, GaN, GaAs, SiC and InP. The calculated information includes distribution of positron density, distribution of positron annihilation rate density, positron bulk lifetime, positron monovacancy lifetime and positron divacancy lifetime.

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