Study on the kink effect in AlGaAs/InGaAs/GaAs PHEMTs

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2003Publisher:Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of SciencesJournal:Acta Physica Sinica, volume 52, page 984 (issn: 1000-3290, eissn: 1000-3290,

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Authors: null Liu Hong-Xia; null Hao Yue; null Zhang Tao; null Zheng Xue-Feng; null Ma Xiao-Hua;

doi: 10.7498/aps.52.984

Study on the kink effect in AlGaAs/InGaAs/GaAs PHEMTs

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Abstract

In this paper, two-dimensional devices simulation program-MEDICI has been used to simulate AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). Doping and electron concentrations, current flow and gate characteristic in PHEMTs are studied. The kink effect in PHEMTs is investigated emphatically as a function of temperature and doping concentration of Schottky layer. The results show that the kink effect is related mainly to the trapping/detrapping process of deep levels that lie in the top layers but not related to the impact ionization alone.

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