Hexagonal boron nitride (h-BN) is a notable inorganic compound that has gained significant attention due to its unique combination of electrical insulation, high thermal conductivity, lightweight structure, and chemical stability. Over the past decades, various h-BN nanostructures have emerged, retaining the material’s intrinsic advantages while imparting unique nanoscale properties. In this study, h-BN was synthesized using a boron oxide-assisted chemical vapor deposition (BOCVD) method, which facilitates in situ boron oxide vapor generation and promotes h-BN growth through its reaction with a nitrogen source. This method is now considered a benchmark in h-BN synthesis, offering high yield, purity, and scalability—qualities that make it highly suitable for industrial applications. Further analysis, including XRD for phase and grain size determination, as well as SEM and TEM for microstructural characterization, was performed on the synthesized h-BN, aiming to explore its potential for gas-sensing applications.