This text presents the results of the examination of programmable memories' radiation reliability. Influence of cobalt-60 gamma radiation was tested on NM27C512 8F85 EPROM and M24128 - B W BN 5 T P EEPROM components. EPROM components proved to have better radiation reliability than EEPROMs. Significant faults in EPROM and EEPROM components appeared at 1300 Gy and 1000 Gy, respectively. Changes in EPROMs are reversible, and after erasing and reprogramming, all EPROM components are functional. Reversibility of changes in EPROMs is attributed to partial light-induced annealing of trapped holes during UV erasure. Due to the cumulative radiation effects, first failures of the previously irradiated EPROMs appear at significantly lower doses. On the other hand, EEPROM changes are irreversible. All observed phenomena have a plausible theoretical explanation, based on the interaction of gamma radiation with the oxide layer of memory cell MOS transistors. The influence of gamma radiation is basically manifested through the change of the net gate surface charge density, and consequently of transistor threshold voltage. For future work we planned the following: 1. To investigate these results for other EPROM and EEPROM components; 2. To include the gate insulator material and its thickness in research; 3. To consider the processing and doping methods used in securing the gate insulator onto the silicon surface; 4. To investigate the radiation-induced mobility changes; 5. To examine the dose rate effects; 6. To investigate the temperature influence of the memory during irradiation. Also, in this chapter the examination of radiation resistance results of the components of over-voltage protections were presented. The influence of n+ radiation was tested on the TSD, MOV, GFSA and Polycarbon Capacitors (the most sensitive elements of the electric filter). It was concluded that under n+ radiation the protection characteristics of TSD degrades considerably worse. A similar effect, only more pronounced was noticed in the case of the MOV. In the case of GFSA, the protection characteristics were improved under n+ radiation. Polycarbon Capacitors exposed to n+ radiation in a given fluence range, under goes a change in its capacitance towards smaller values. These results show that TSD, MOV and Polycarbon Capacitors are radiation sensitive components. The GFSA shows a considerable improvement of the protection characteristics under n+ radiation. Therefore by investigating the obtained results, it can be noticed that GFSA shows the best characteristics stability under radiation influence, among examined over - voltage protection components. The results obtained when GFSA is in a radiation environment, show that there is no need to use GFSA with built-in radioactive sources,