This chapter aims at highlighting the influence of the electrical access of different kinds of Vertical-Cavity Surface-Emitting Laser (VCSEL) (Rissons & Mollier, 2009). By presenting an overview of electrical equivalent circuit modeling and characterization for the VCSEL chip, based on the Scattering parameters, an overview of the VCSEL performance is given in order to provide a good knowledge of this device behavior in various operation modes and avoid its inadequate utilization (Rissons et al., 2003), (Perchoux et al., 2008), (Bacou et al., 2009). Due to the emergence of the short distance optical communication, the VCSELs have become, in the past ten years, a key component of the optical interconnections. The current progress in the VCSEL technology makes this laser diode promising for different application fields and competitive with respect to the Edge-Emitting laser (EEL) and the Light Emitting Diode (LED) (providing the laser performance while keeping the cost effectiveness of the LED)(Koyama, 2006),(Suematsu & Iga, 2008). Above all the VCSELs have been designed to fulfill the need of optoelectronic circuit planarization. Since its invention in 1977 by Prof. K. Iga (Iga et al., 1988) and its first commercialization at the end of the 90’s, the VCSEL structure finds itself in a state of constant progress. Today, it covers a wide wavelength emission range (from the blue-green band up to the infrared) that enables the usage of these components in various application fields, not only in the short distance digital communications (LAN, Avionic network (Ly et al., 2008), ...) but also in consumer applications (laser printers, laser mice, display systems, etc.).