Electric properties of the interface quantum dot - matrix

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2009Publisher:Yukhnovskii Institute for Condensed Matter PhysicsJournal:Condensed Matter Physics, volume 12, pages 215-223 (issn: 1607-324X,

Copyright policy )

Authors: Peleshchak, R.M.; Bachynsky, I.Ya.;

doi: 10.5488/cmp.12.2.215

Electric properties of the interface quantum dot - matrix

- Summary
- Subjects
- Metrics

Abstract

A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there is a double electric layer, that is n+-n junction.

Related Organizations

Zhytomyr Ivan Franko State University
Ukraine

Keywords

electron-deformation and electrostatic potentials, Physics, QC1-999, quantum dots

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	6
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average