We demonstrate robust and reversible electric-current control of the anomalous Hall effect (AHE) in a two-dimensional WTe₂/Fe₃GeTe₂ (FGT) stack. Applying a current through Td-WTe₂ leads to a giant modulation of the AHE of the adjacent FGT layer, with the relative change of the AHE conductivity exceeding 180%. Control experiments show that i) the observed effect is absent in pure FGT, ii) the modulation weakens in thicker FGT films, confirming its interfacial origin, and iii) the modulation peaks for bilayer WTe₂, indicating that the Berry-curvature dipole (BCD) plays the dominant role in the modulation. We propose that the charge current I generates an out-of-plane magnetization Mz via BCD in WTe₂ and Mz modifies the exchange splitting of FGT via the inverse magnetic proximity effect, thereby altering its Berry curvature and nontrivially influencing the AHE. The demonstrated method of AHE control offers new possibilities for magnetism control, i.e., for the study of AHE-transistors as well as electric-current control of quantum magnets, especially magnetic insulators.