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Article . 2023
License: CC BY
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COMPARATIVE STUDY OF SHEET RESISTANCE BETWEEN SILICON DOPED N AND SILICON P IN DARK AND NO APPLY VOLTAGE

descriptionPublicationkeyboard_double_arrow_right Article 14 Apr 2023Publisher:Zenodo
Authors: Alassane Diaw, Papa Touty Traore;

doi: 10.5281/zenodo.7976629 , 10.5281/zenodo.7976628

COMPARATIVE STUDY OF SHEET RESISTANCE BETWEEN SILICON DOPED N AND SILICON P IN DARK AND NO APPLY VOLTAGE

Abstract

The aim of the study is to compare the sheet resistance between silicon doped n and silicon doped p at dark and no apply voltage.The sheet resistance ρsq at equilibrium is determined from the net ionised doping concentration and the mobility of the majority carriers.The calculator then determines the sheet resistance and the junction depth of the surface diffusion at outdoor temperature..The sheet resistance of silicon with background doped boron has great sheet resistance compared to silicon with background doped phosphorus.

Keywords

Sheet Resistance Silicon Doped Dark Voltage

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popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
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influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
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impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
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