<div class="htmlview paragraph">Thin barium titanate(BT), lead zirconate titanate(PZT), barium strontium titanate(BST) films are being developed for use in microelectronics, electromechanical and optoelectronic applications. Thin BaTiO₃, Pb(ZrTi)O₃ and (BaSr)TiO₃ film capacitor devices were fabricated using RF sputtering techniques. The typical dielectric constant of these film capacitors was in the range of 300 to 1140. These film capacitors had dissipation factors between 0.2% to 0.6 % before annealing and 4-6% after annealing. The film capacitors have breakdown voltages in the range of 1×10⁵ V/cm to 1.2×10⁶ V/cm. The resistivity was in the range of 10¹⁰ to 10¹² ohm-cm before annealing and 10¹³ to 10¹⁴ ohm-cm after annealing. The capacitance of films produced to-date had little dependence on frequency. Thermal cycling in the temperature range of 50 to 300°C had very limited impact on the capacitance and dissipation factor. Measurements of dielectric and material properties are reported.</div>