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A Single-Event Transient (SET) Tolerant Dynamic Bias Comparator in 65-nm CMOS

Authors: Andrew Ash; John Hu;

A Single-Event Transient (SET) Tolerant Dynamic Bias Comparator in 65-nm CMOS

Abstract

A single-event transient (SET) tolerant dynamic bias comparator leveraging path-splitting is presented in this paper. The dynamic bias structure with a tail capacitor is found to be vulnerable to positive and negative SET transients. A negative transient on the tail transistor doubles the energy per conversion. A positive transient on the tail MOS capacitor reduces the preamplifier gain by 35.7%, which increases the metastability error rate in the subsequent latch. A path splitting technique is applied to mitigate the positive SET. Simulations in a 65-nm CMOS process showed that a two path split can recover the comparator output voltage swing by 12.7%. Compared with the state-of-the-art CMOS radiation-hardened by design (RHBD) dynamic comparators, this circuit achieved the lowest energy per comparison while maintaining low input referred noise and gaining SET tolerance in the evaluation phase.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
3
Top 10%
Average
Average
hybrid