In this paper, a new concept of low-loss Reverse-Conducting Insulated-Gate Bipolar Transistor with Collector-side Injection-Enhanced structure (RC-IGBT-CIE) is proposed and investigated using simulations. In reverse conduction (the on state of the diode mode), the CIE structure enhances the collector-side carrier concentration of the proposed RC-IGBT-CIE, which results in low reverse-conducting voltage (VF). The low reverse recovery loss and low turn-on loss using an inductive load circuit are obtained by using the modified carrier concentration profile resulted from both the CIE effect and the low-injection-efficiency p-emitter. Simulation results show that, with the same sum of turn-on loss and reverse recovery loss (Eon + Erec), when compared to conventional RC-IGBT with anti-parallel thyristor (RC-IGBT-thyristor), the RC-IGBT-CIE reduces VF by 9.2%, and meanwhile, with the same total conducting voltage (Von, sat + VF), the total switching loss (Eoff + Eon + Erec) is reduced by 20.9% but does not sacrifice short-circuit capability.