Since 3D NAND was introduced to the industry with 24 layers, the areal density has been successfully increased more than ten times, and has exceeded 10 Gb/mm2 with 176 layers. The physical scaling of XYZ dimensions including layer stacking and footprint scaling enabled the density scaling. Logical scaling has been successfully realized, too. TLC (triple-level cell, 3 bits per cell) is now the mainstream in 3D NAND, while QLC (quad-level cell, 4 bits per cell) is increasing the presence. Several attempts and partial demonstrations were made for PLC (penta-level cell, 5 bits per cell). CMOS under array (CuA) enabled the die size reduction and performance improvements. Program and erase schemes to address the technology challenges such as short-term data retention of the charge-trap cell and the large block size are being investigated.