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A Numerical Analysis of a CMOS Image Sensor with a Simple Fixed-Pattern-Noise-Reduction Technology.

簡素で効果的な固定パターンノイズ抑圧を実現したCMOSイメージセンサの動作解析
Authors: Kazuya Yonemoto; Hirofumi Sumi; Yoshikazu Ohba; Hiroshi Kawarada;

A Numerical Analysis of a CMOS Image Sensor with a Simple Fixed-Pattern-Noise-Reduction Technology.

Abstract

A 1/3-inch 640×480-pixel CMOS image sensor was developed using a simple fixed-pattern-noise-reduction technology with a five-transistor pixel circuit and a low input-voltage I-V converter. In this report, we show the effectiveness of a low input-voltage I-V converter with a current-mirror circuit in improving the amplification ratio and linearity of a pixel circuit. The dependence of the pixel signal characteristics on the parameters of the pixel transistors was also analyzed. In a five-transistor pixel circuit, the threshold voltage of the X-Y addressing transistor affects the amplitude and level of the readout pulse. This report also contains analysis of the mechanism of the X-Y addressing transistor, illustrating the concept behind the selection of the threshold voltage.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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