In our earlier work we introduce a numerical analysis to investigate the excess noise and performance factor of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process. In this paper we investigate the gain, breakdown voltage and carrier injection breakdown probability of homojunction avalanche photodiode in the wide range of multiplication region width. Also in our calculations the efiects of dead space has been considered. Our analyses based on the history dependent multiplication theory (HDMT) and width independent ionization coe-cient.