A topological insulator is an area that has yet to be fully explored and developed. The charge-induced bandgap fluctuation in the best-known bismuth-chalcogenide-based topological insulators is approximately 10MeV in magnitude. The major focus has shifted to the investigation of the presence of high-symmetry electronic bands as well as the utilization of easily produced materials. As the subject of topological insulators is still in the nascent stage, there is growing research and knowledge in the emerging field. This book is intended to provide the readers with an understanding of the needs and application of these materials.