
pmid: 41581269
Deposition velocities of 222Rn progeny were determined using 222Rn progeny sensors (DRPS) and flow-mode integrated samplers at various 222Rn gas concentrations under steady atmospheric conditions in a large walk-in type calibration chamber of volume 22.7 m3 with a surface-to-volume ratio of 2.1 m-1. The deposition of 222Rn progeny on indoor surfaces is a dominant removal mechanism from the ambient air, reducing their concentration in the air and thereby decreasing the inhalation dose. Hence, knowledge of deposition velocity is important for inhalation dose assessment. Deposition velocity, defined as the ratio of the deposition atom flux (atoms cm-2 s-1) to the total airborne atom concentration (atoms cm-3), depends on various factors such as particle size distribution, atmospheric parameters and prevailing turbulence. In this study the impact of turbulence on deposition velocity was evaluated for two distinct situations: (i) for the surfaces facing the direction of turbulence, and (ii) for surfaces facing opposite to the turbulence direction. The deposition velocities of the progeny remained the same (considering the uncertainty associated with the measurements) regardless of the 222Rn gas concentrations in the chamber. The deposition velocities for the surfaces facing turbulence had a mean value of 0.0200 ± 0.0002 cm s-1 (0.720 ± 0.007 m h-1), while that for the surfaces facing opposite to turbulence was 0.0140 ± 0.0001 cm s-1 (0.501 ± 0.004 m h-1). These values are 5.5 and 3.8 times higher than the typical indoor deposition velocity of 0.132 m h-1. Statistical analysis of the data confirmed that turbulence influences the deposition mechanism of 222Rn progeny. The data obtained from this study highlights the importance of delineating the dependence of deposition velocity on friction velocity (u∗), and the need to characterize this parameter when reporting progeny deposition rates. It also emphasises the need to consider this parameter when testing devices and deducing sensitivity factors for deposition-based passive devices.
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