A Comprehensive Study of Negative Bias Temperature Instability in Mos Structures

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2023 Italy Publisher:Elsevier BVJournal:Microelectronics Reliability, volume 155, page 115,371 (issn: 0026-2714,

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Authors: Irrera, Fernanda; Broccoli, Giordano;

doi: 10.2139/ssrn.4429243 , 10.1016/j.microrel.2024.115371

handle: 11573/1706913

A Comprehensive Study of Negative Bias Temperature Instability in Mos Structures

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Abstract

il lavoro descritto in questo articolo ha portato allo sviluppo di un modello analitico dello shift della tensione di soglia basato sulla degradazione di ossidi in MOSFET soggetti a invecchiamento. Il modello è stato validato con esperimenti su dispositivi di qualità di produzione. Sulla base del modello è possibile estrapolare il tempo medio alla rottura

Country

Italy

Related Organizations

Sapienza University of Rome
Italy

Keywords

shift della tensione di soglia; degradazione dell'ossido; tempo medio di rottura di MOSFET

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