Capacitance-voltage Profiling Techniques for Characterization of Semiconductor Materials and Devices

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type , Preprint 01 Jan 2019Embargo end date: 01 Nov 2010 English Publisher:Elsevier BVJournal:SSRN Electronic Journal (eissn: 1556-5068,

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Authors: Cristea, Miron J;

doi: 10.2139/ssrn.3433675 , 10.6084/m9.figshare.6031133.v1 , 10.5281/zenodo.1208183 , 10.5281/zenodo.1208182 , 10.48550/arxiv.1011.3463 , 10.6084/m9.figshare.6031133

arXiv: 1011.3463

Capacitance-voltage Profiling Techniques for Characterization of Semiconductor Materials and Devices

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Abstract

A new capacitance-voltage profiling technique of semiconductor junctions is proposed for characterisation of semiconductor materials and devices. The measurement technique is simple, non-destructive and it has a greater accuracy compared with the classical C-V method of J. Hilibrand and R. D. Gold, developed in 1960.

Related Organizations

University of Bucharest
Romania
Polytechnic University of Bucharest
Romania

Keywords

Condensed Matter - Materials Science, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences

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