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Focused Ion Beam Implantation

descriptionPublicationkeyboard_double_arrow_right Report , Other literature type 17 Mar 1992Publisher:Defense Technical Information Center
Authors: John Melngailis;

doi: 10.21236/ada249662

Focused Ion Beam Implantation

Abstract

Abstract : The goals of this research program were to develop devices fabricated by focused ion beam implantation, such as tunable Gunn diodes, GaAs MESFET'S, silicon MOSFET's or other novel devices, and to advance the focused ion beam technology. All the goals were reached and are reported in this report.

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Powered by OpenAIRE graph
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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
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