
doi: 10.1889/1.2785261
Abstract Both top‐gate and bottom‐gate amorphous ZnO TTFTs were effectively fabricated by thinning the ZnO layer and by using all‐etching processes. Rather high field‐effect mobilities of 25 cm 2 /Vs and 4 cm 2 /Vs and on/off current ratios of >10 7 and >10 6 were achieved for top‐gate and bottom‐gate configurations, respectively.
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