30.4: Short‐Channel Effect of Sub‐Micron Poly‐Si TFTs with Large Poly‐Si Grains

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 May 1998 English Publisher:WileyJournal:SID Symposium Digest of Technical Papers, volume 29, pages 891-894 (issn: 0097-966X, eissn: 2168-0159,

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Authors: H. Akimoto; M. Hatano; T. Sakai;

doi: 10.1889/1.1833907

30.4: Short‐Channel Effect of Sub‐Micron Poly‐Si TFTs with Large Poly‐Si Grains

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Abstract

Abstract To study 3 V‐driven LSI‐like TFTs, we fabricated high‐temperature n‐channel poly‐Si TFTs, some of which had a subthreshold slope of 90 mV/dec and an electron field mobility of 432 cm 2 /Vs, with submicron channel length and large poly‐Si grains. We only observed an anomalous parasitic bipolar transistor effect in the TFTs with good trans‐conductance, and concluded that the grain‐boundary affects the trans‐conductance severely than the threshold voltage and the subthreshold slope.

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Hitachi (Japan)
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Isuzu Advanced Engineering Center (Japan)
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