
Ð’ работе были получены оÑновные характериÑтики полупроводниковых лазеров до Ñ‚Ñ€Ð°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¸ поÑле. Ðа оÑнове полученных результатов был проведён анализ влиÑÐ½Ð¸Ñ Ñ‚Ñ€Ð°Ð²Ð»ÐµÐ½Ð¸Ñ Ð²Ð¾Ð»Ð½Ð¾Ð²Ð¾Ð´Ð° на оÑновные характериÑтики лазеров.
In this work the basic characteristics of semiconductor lasers before milling and after it were obtained. Based on the results the influence of waveguide milling on the main characteristics of lasers was obtained.
focused ion beam, wavegude, волновод, полÑпÑоводниковÑй лазеÑ, semiconductor laser, ÑÑокÑÑиÑованнÑй ионнÑй пÑÑок
focused ion beam, wavegude, волновод, полÑпÑоводниковÑй лазеÑ, semiconductor laser, ÑÑокÑÑиÑованнÑй ионнÑй пÑÑок
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