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Фотоэлектрический сенсор водорода на основе диода Шоттки

магистерская диссертация
descriptionPublicationkeyboard_double_arrow_right Other literature type 01 Jan 2017 Russian Publisher:Санкт-Петербургский политехнический университет Петра Великого

doi: 10.18720/spbpu/2/v17-2767

Фотоэлектрический сенсор водорода на основе диода Шоттки

Abstract

Исследованы электрические и фотоэлектрические свойства структур Pd-оксид-n-InP интервале температур 90-340К в присутствии водорода и без него. В структурах обнаружены два механизма проводимости - туннельный и термотуннельный, определены основные параметры, характеризующие эти механизмы. Продемонстрировано влияние водорода на ВАХ структур. Показано, что водород всегда смещает проводимость структур в сторону туннельного механизма. Продемонстрировано, что фотоэлектрическая регистрация присутствия водорода в среде на порядок чувствительнее по сравнению с электрической.

Keywords

Диоды полупроводниковые с барьером Шоттки, Датчики фотоэлектрические, Сенсоры оптоэлектронные, Водород

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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