AbstractMeasurements of Schottky-barrier heights in the temperature range 175-295 K for refractory metal-silicon and corresponding silicide-silicon interfaces are presented. Refractory metal silicide formation is shown to have only a small effect on the barrier height. The n-type and p-type barrier heights for both the metal and the reacted silicide phase are shown to decrease with increasing temperature with the stun equal, within the experimental accuracy, to the indirect energy gap of silicon at any measured temperature. These results indicate that the temperature dependence of the barrier heights is mainly due to that of the indirect energy gap in the silicon.