ABSTRACTPoly-GaAs films have been grown on amorphous insulating substrates by MOCVD technique. The films were analyzed using TEM, X-ray diffraction, AES and ESCA measurements. The results show that poly-GaAs films are flat, bright and close in texture and stoichiometric. The grain size is about 200Å. The film contains trace impurities such as Si,O and C. They are evenly distributed in the film. The poly-GaAs films were crystallized by CW Ar+ laser with a increase of grain size from 200Å to 40 µm. Schottky barrier diodes of good I-V characteristics were made on the laser recrystallized GaAs films.